Defect Metrology and Charge Trapping Dynamics in Transfer-Doped Diamond Transistors
Summary
The Department of Defense seeks to develop a non‑destructive defect metrology technique and laboratory‑scale instrument for identifying and characterizing charge traps in hydrogen‑terminated diamond transistors. This capability is critical for enabling high‑frequency, high‑power RF electronics based on ultra‑wide bandgap diamond material, which currently suffers from performance‑limiting current collapse.